GalnN-based LED structures on selectively grown semi-polar crystal facets
Identifieur interne : 004100 ( Main/Repository ); précédent : 004099; suivant : 004101GalnN-based LED structures on selectively grown semi-polar crystal facets
Auteurs : RBID : Pascal:10-0514908Descripteurs français
- Pascal (Inist)
- Diode électroluminescente, Champ interne, Champ électrique, Onde électronique, Fonction onde, Piézoélectricité, Epitaxie, Densité défaut, Croissance sélective, Surface sélective, Mécanisme croissance, Matériau cristallin, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Puits quantique, Composé binaire, Indium, GaInN, GaN.
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Abstract
In conventional nitride-based light emitting diodes, huge internal electric fields lead to a reduced overlap of electron and hole wave functions in the active GaInN quantum wells as a consequence of the piezoelectricity of these polar materials. In order to minimize these internal fields while still maintaining the well-established c-direction as main epitaxial growth direction for high-quality low-defect-density layers, we have investigated semi-polar LED structures on the side-facets of triangular GaN stripes grown by selective area epitaxy. The reduced internal electric field could be confirmed by several spectroscopic methods. We found a strongly facet dependent growth mechanism leading to very flat surfaces on {110 facets as opposed to their {112 counterparts. An increased indium uptake on semipolar {101} facets as compared to conventional c-plane layers helped to shift the LED emission to longer wave lengths beyond 500 nm in the green spectral range despite the significantly reduced field-dependent Stark shift.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">GalnN-based LED structures on selectively grown semi-polar crystal facets</title><author><name sortKey="Scholz, Ferdinand" uniqKey="Scholz F">Ferdinand Scholz</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Optoelectronics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Wunderer, Thomas" uniqKey="Wunderer T">Thomas Wunderer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Optoelectronics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Feneberg, Martin" uniqKey="Feneberg M">Martin Feneberg</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Thonke, Klaus" uniqKey="Thonke K">Klaus Thonke</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Chuvilin, Andrei" uniqKey="Chuvilin A">Andrei Chuvilin</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Central Facility of Electron Microscopy, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Kaiser, Ute" uniqKey="Kaiser U">Ute Kaiser</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Central Facility of Electron Microscopy, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Metzner, Sebastian" uniqKey="Metzner S">Sebastian Metzner</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Institute of Experimental Physics, Otto von Guericke University</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Bertram, Frank" uniqKey="Bertram F">Frank Bertram</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Institute of Experimental Physics, Otto von Guericke University</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Christen, J Rgen" uniqKey="Christen J">J Rgen Christen</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Institute of Experimental Physics, Otto von Guericke University</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0514908</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0514908 INIST</idno><idno type="RBID">Pascal:10-0514908</idno><idno type="wicri:Area/Main/Corpus">003997</idno><idno type="wicri:Area/Main/Repository">004100</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Crystalline material</term><term>Defect density</term><term>Electric field</term><term>Electron wave</term><term>Epitaxy</term><term>Gallium nitride</term><term>Growth mechanism</term><term>Indium</term><term>Indium nitride</term><term>Internal field</term><term>Light emitting diode</term><term>Piezoelectricity</term><term>Quantum well</term><term>Selective growth</term><term>Selective surface</term><term>Ternary compound</term><term>Wave function</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term><term>Champ interne</term><term>Champ électrique</term><term>Onde électronique</term><term>Fonction onde</term><term>Piézoélectricité</term><term>Epitaxie</term><term>Densité défaut</term><term>Croissance sélective</term><term>Surface sélective</term><term>Mécanisme croissance</term><term>Matériau cristallin</term><term>Composé ternaire</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Puits quantique</term><term>Composé binaire</term><term>Indium</term><term>GaInN</term><term>GaN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In conventional nitride-based light emitting diodes, huge internal electric fields lead to a reduced overlap of electron and hole wave functions in the active GaInN quantum wells as a consequence of the piezoelectricity of these polar materials. In order to minimize these internal fields while still maintaining the well-established c-direction as main epitaxial growth direction for high-quality low-defect-density layers, we have investigated semi-polar LED structures on the side-facets of triangular GaN stripes grown by selective area epitaxy. The reduced internal electric field could be confirmed by several spectroscopic methods. We found a strongly facet dependent growth mechanism leading to very flat surfaces on {110 facets as opposed to their {112 counterparts. An increased indium uptake on semipolar {101} facets as compared to conventional c-plane layers helped to shift the LED emission to longer wave lengths beyond 500 nm in the green spectral range despite the significantly reduced field-dependent Stark shift.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>207</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>GalnN-based LED structures on selectively grown semi-polar crystal facets</s1></fA08><fA11 i1="01" i2="1"><s1>SCHOLZ (Ferdinand)</s1></fA11><fA11 i1="02" i2="1"><s1>WUNDERER (Thomas)</s1></fA11><fA11 i1="03" i2="1"><s1>FENEBERG (Martin)</s1></fA11><fA11 i1="04" i2="1"><s1>THONKE (Klaus)</s1></fA11><fA11 i1="05" i2="1"><s1>CHUVILIN (Andrei)</s1></fA11><fA11 i1="06" i2="1"><s1>KAISER (Ute)</s1></fA11><fA11 i1="07" i2="1"><s1>METZNER (Sebastian)</s1></fA11><fA11 i1="08" i2="1"><s1>BERTRAM (Frank)</s1></fA11><fA11 i1="09" i2="1"><s1>CHRISTEN (Jürgen)</s1></fA11><fA14 i1="01"><s1>Institute of Optoelectronics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Semiconductor Physics, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Central Facility of Electron Microscopy, Ulm University</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Experimental Physics, Otto von Guericke University</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>1407-1413</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000193148560350</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>46 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0514908</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>In conventional nitride-based light emitting diodes, huge internal electric fields lead to a reduced overlap of electron and hole wave functions in the active GaInN quantum wells as a consequence of the piezoelectricity of these polar materials. In order to minimize these internal fields while still maintaining the well-established c-direction as main epitaxial growth direction for high-quality low-defect-density layers, we have investigated semi-polar LED structures on the side-facets of triangular GaN stripes grown by selective area epitaxy. The reduced internal electric field could be confirmed by several spectroscopic methods. We found a strongly facet dependent growth mechanism leading to very flat surfaces on {110 facets as opposed to their {112 counterparts. An increased indium uptake on semipolar {101} facets as compared to conventional c-plane layers helped to shift the LED emission to longer wave lengths beyond 500 nm in the green spectral range despite the significantly reduced field-dependent Stark shift.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F02</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Champ interne</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Internal field</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Campo interno</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Champ électrique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electric field</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Campo eléctrico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Onde électronique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Electron wave</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Onda electrónica</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Fonction onde</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Wave function</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Función onda</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Piézoélectricité</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Piezoelectricity</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Piezoelectricidad</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Epitaxie</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Epitaxy</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Epitaxia</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Densité défaut</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Defect density</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Densidad defecto</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Croissance sélective</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Selective growth</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Surface sélective</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Selective surface</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Superficie selectiva</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Matériau cristallin</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Crystalline material</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Material cristalino</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Ternary compound</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>23</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>24</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>24</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>24</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>25</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0><s5>25</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Puits quantique</s0><s5>26</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Quantum well</s0><s5>26</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Pozo cuántico</s0><s5>26</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé binaire</s0><s5>27</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Binary compound</s0><s5>27</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>27</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Indio</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>GaInN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>347</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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